This New Transistor Will Revolutionize Technology Forever To Create Unbreakable Devices
Apple's M4 chip has 28 billion transistors. NVIDIA's most powerful chip has 200 billion. So transistors are key to the proper functioning of electronic products, and the more of them in a smaller space, the more power and efficiency can be achieved. The problem is that today's technology can cause us some problems, at least for now, as they have discovered a new way to produce truly efficient transistors.
A newly developed transistor whose research has just been published has shown extraordinary levels of resistance in tests, which could radically change the way the electronic devices we use every day work.
Although you may not know them, transistors are the key to modern technology and consist of tiny switches that allow energy to flow. In fact, they are found in all kinds of technology today, including your cell phone or computer. The smaller and more resistant transistors are, the more innovation can be achieved in the technology applied. Now, a new transistor design combines speed, size, and corrosion resistance that could change things up until now.
From the giant data centers that store your laptop or mobile phone, thanks to these transistors, technology could gain great efficiency, although for now it is necessary to transfer it to a practical scale so that the systems and machines we use become faster. The transistor in question is made of a ferroelectric material based on boron nitride, a fairly new compound that is attracting attention for its functions.
The device uses two layers of this material, which when an electric current is applied, move slightly, causing a change in the configuration of boron and nitrogen atoms. This property allows transistors to be incredibly fast and thin, which could reduce the size of electronic devices and improve their efficiency.
One of the most notable features of this design is that the slight displacement of the layers also changes the properties of the material in a way that reduces wear. During testing, this transistor was shown to be able to switch between “on” and “off” at least 100 billion times without showing signs of degradation. This makes it a more durable option compared to current flash memory storage technologies, which tend to wear out over time.
Although the researchers behind this innovation realize that there is still a long way to go before these transistors can be used in commercial devices, they are optimistic about the wide range of uses they could have, so they are certainly worthy of recognition.